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1N4148UR-1-TR PDF预览

1N4148UR-1-TR

更新时间: 2024-11-18 13:03:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管开关
页数 文件大小 规格书
2页 44K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2

1N4148UR-1-TR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-213AA
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.62
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified参考标准:MIL-S-19500/116
最大反向恢复时间:0.005 µs表面贴装:YES
端子面层:TIN LEAD端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4148UR-1-TR 数据手册

 浏览型号1N4148UR-1-TR的Datasheet PDF文件第2页 
1N4148UR-1  
and  
• 1N4148UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV  
PER MIL-PRF-19500/116  
CDLL4148  
• SWITCHING DIODE  
• HERMETICALLY SEALED  
• METALLURGICALLY BONDED  
• DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +200°C  
Storage Temperature: -65°C to +200°C  
Operating Current: 200 mA @ T = + 25°C  
A
Derating Factor: 1.14 mA/°C Above T = + 25°C  
A
Surge Current A: 2A, sine wave, P = 8.3ms  
w
Surge Current B: 1.41A, square wave, P = 8.3ms  
w
MILLIMETERS  
INCHES  
DIM MIN MAX MIN MAX  
D
F
1.60  
0.41  
3.30  
1.70 0.063 0.067  
0.55 0.016 0.022  
3.70 .130 .146  
G
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified  
G1  
S
2.54 REF.  
0.03 MIN.  
.100 REF.  
.001 MIN.  
V
V
t
rr  
f 1  
= 10 mA  
f 2  
V
V
I
I
I
= 100 mA  
BR  
RWM  
0
@
F
@
F
(Note 1)  
@100µA  
FIGURE 1  
DESIGN DATA  
Volts  
100  
Volts (pk)  
75  
mA  
200  
V dc  
0.8  
V dc  
1.2  
n sec  
5
CASE: DO-213AA, Hermetically sealed  
glass case. (MELF, SOD-80, LL34)  
I
I
I
I
R1  
R2  
R3  
@ 20 V  
R4  
@ 75 V  
CAPACITANCE CAPACITANCE  
@ 20 V dc  
@ 75 V dc  
@ 0 V  
@ 1.5 V  
LEAD FINISH: Tin / Lead  
T
= 150°C  
µA  
T
= 150°C  
µA  
A
A
THERMAL RESISTANCE (R  
100 °C/W maximum AT L = 0  
):  
OJEC  
nA  
25  
µA  
0.5  
pF  
pF  
35  
75  
4.0  
2.8  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 70  
OJX  
POLARITY: Cathode end is banded.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) Of this Device is Approximately  
+6PPM/°C. The COE of the Mounting  
Surface System Should Be Selected To  
Provide A Suitable Match With This  
Device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
113  

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