Datasheet > 1N4148W

1N4148W

更新时间： 2024-11-18 06:17:55

品牌	Logo	应用领域
TSC		二极管开关光电二极管 IOT
页数	文件大小	规格书
2页	97K
描述
400mW High Speed SMD Switching Diode

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数据手册

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1N4148W 数据手册

1N4148W/1N4448W/1N914BW

400mW High Speed SMD Switching Diode

Small Signal Diode

SOD-123F

Features

Fast switching device(Trr<4.0nS)

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Dimensions

Min

1.5

Max

Min

Max

Mechanical Data

Case : Flat lead SOD-123 small outline plastic package

1.7 0.059 0.067

3.7 0.130 0.146

0.7 0.020 0.028

2.7 0.098 0.106

3.3

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

0.5

High temperature soldering guaranteed: 260°C/10s

Polarity : Indicated by cathode band

Weight : 8.85±0.5 mg

2.5

0.8

1.0

0.031 0.039

0.05

0.2 0.002 0.008

Ordering Information

Part No.

Packing

Package

1NxxxxW RH

3Kpcs / 7" Reel

SOD-123F

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

P^D

Value

Units

Power Dissipation

400

100

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Mean Forward Current

VRSM

V^RRM

I^FRM

300

°C/W

°C

150

Thermal Resistance (Junction to Ambient) (Note 1)

Junction and Storage Temperature Range

RθJA

TJ, TSTG

450

-65 to + 150

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

100

IR=100uA

Reverse Breakdown Voltage

I^R=5uA

V(BR)

Forward Voltage

0.62

0.72

1.0

1N4448W, 1N914BW

1N4148W

I^F=5.0mA

V^F

I^F=10.0mA

I^F=100.0mA

V^R=20V

1N4448W, 1N914BW

μA

Reverse Leakage Current

5.0

4.0

V^R=75V

Junction Capacitance

V^R=0, f=1.0MHz

Trr

Reverse Recovery Time (Note 2)

Notes:1. Valid provided that electrodes are kept at ambient temperature

Notes:2. Reverse Recovery Test Conditions: I_F=10mA, I_R=60mA, R_L=100Ω, I_RR=1mA

Version : C09

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