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1N4148W-E3-18 PDF预览

1N4148W-E3-18

更新时间: 2024-10-30 19:38:51
品牌 Logo 应用领域
威世 - VISHAY 开关测试光电二极管
页数 文件大小 规格书
5页 95K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

1N4148W-E3-18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOD-123, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:10 weeks风险等级:0.6
其他特性:FAST SWITCHING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W最大重复峰值反向电压:100 V
最大反向电流:100 µA最大反向恢复时间:0.004 µs
反向测试电压:100 V表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:DUALBase Number Matches:1

1N4148W-E3-18 数据手册

 浏览型号1N4148W-E3-18的Datasheet PDF文件第2页浏览型号1N4148W-E3-18的Datasheet PDF文件第3页浏览型号1N4148W-E3-18的Datasheet PDF文件第4页浏览型号1N4148W-E3-18的Datasheet PDF文件第5页 
1N4148W  
Vishay Semiconductors  
www.vishay.com  
Small Signal Fast Switching Diode  
FEATURES  
• Silicon epitaxial planar diode  
• Fast switching diodes  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101  
qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-123  
Weight: approx. 10.3 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
TYPE MARKING  
INTERNAL CONSTRUCTION  
REMARKS  
1N4148W-E3-08 or 1N4148W-E3-18  
1N4148W-HE3-08 or 1N4148W-HE3-18  
1N4148W  
A2  
Single diode  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
75  
UNIT  
Reverse voltage  
VR  
V
V
Repetitive peak reverse voltage  
VRRM  
100  
Average rectified current half wave rectification with  
resistive load (1)  
f 50 Hz  
IF(AV)  
150  
mA  
tp < 1 s  
IFSM  
IFSM  
Ptot  
500  
2
mA  
A
Surge forward current  
Power dissipation (1)  
tp = 1 μs  
350  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
357  
UNIT  
K/W  
°C  
Junction temperature  
150  
Storage temperature range  
Operating temperature range  
Tstg  
- 65 to + 150  
- 55 to + 150  
°C  
Top  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
Rev. 1.7, 08-May-13  
Document Number: 85748  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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