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1N4148W-GS08 PDF预览

1N4148W-GS08

更新时间: 2024-11-14 12:52:39
品牌 Logo 应用领域
威世 - VISHAY 整流二极管开关
页数 文件大小 规格书
5页 91K
描述
Small Signal Fast Switching Diode

1N4148W-GS08 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.26
Is Samacsys:NBase Number Matches:1

1N4148W-GS08 数据手册

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1N4148W-V  
Vishay Semiconductors  
www.vishay.com  
Small Signal Fast Switching Diode  
FEATURES  
• These diodes are also available in other case  
styles including the DO-35 case with the type  
designation 1N4148, the MiniMELF case with the  
type designation LL4148, and the SOT-23 case  
with the type designation IMBD4148-V.  
• Silicon epitaxial planar diode  
• Fast switching diodes  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-123  
Weight: approx. 10.3 mg  
Packaging codes/options:  
GS18/10K per 13" reel (8 mm tape), 10K/box  
GS08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
TYPE MARKING  
INTERNAL CONSTRUCTION  
REMARKS  
1N4148W-V  
1N4148W-V-GS18 or 1N4148W-V-GS08  
A2  
Single diode  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
75  
UNIT  
Reverse voltage  
VR  
V
V
Repetitive peak reverse voltage  
VRRM  
100  
Average rectified current half wave  
rectification with resistive load (1)  
f 50 Hz  
IF(AV)  
150  
mA  
Surge forward current  
Power dissipation (1)  
t < 1 s and Tj = 25 °C  
IFSM  
Ptot  
500  
350  
mA  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
375  
UNIT  
K/W  
°C  
Junction temperature  
150  
Storage temperature  
Tstg  
- 65 to + 150  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
Rev. 1.5, 27-Jul-12  
Document Number: 85748  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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