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1N4148WS PDF预览

1N4148WS

更新时间： 2024-11-21 11:12:15
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管信号二极管
页数 文件大小 规格书
5页 226K
描述
小信号二极管

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1N4148WS 数据手册

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Small Signal Diodes  
1N4148WS, 1N4448WS,  
1N914BWS  
Features  
• General Purpose Diodes  
• Fast Switching Device (T < 4.0 ns)  
RR  
www.onsemi.com  
• Very Small and Thin SMD Package  
• Moisture Level Sensitivity 1  
T
• Matte Tin (Sn) Lead Finish  
2
SOD−323FL  
• Green Mold Compound  
(Flat Lead)  
CASE 477AB  
• These Devices are Pb−Free and are RoHS Compliant  
1
ABSOLUTE MAXIMUM RATINGS  
Band Indicates Cathode  
Parameter  
Symbol  
Value  
100  
75  
Unit  
V
Non−Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Continuous Forward Current  
V
V
RSM  
RRM  
FRM  
ELECTRICAL SYMBOL  
V
I
300  
150  
mA  
mA  
A
(1)  
(2)  
I
O
Cathode  
Anode  
Non−repetitive Peak Forward Surge  
Current  
I
FSM  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 3 of this data sheet.  
Pulse Width = 1.0 s  
Pulse Width = 1.0 ms  
1.0  
4.0  
Operating Junction Temperature  
Storage Temperature Range  
T
+150  
°C  
°C  
J
T
−55 to +150  
STG  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
Value  
200  
Unit  
mW  
P
D
Power Dissipation (T = 25°C)  
C
R
Thermal Resistance, Junction−to−Ambient (Note 1)  
500  
°C/W  
q
JA  
1. Device mounted on FR−4 PCB minimum land pad.  
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
Conditions  
= 100 mA  
Min  
100  
75  
−
Max  
−
Unit  
BV  
Breakdown Voltage  
Reverse Current  
Forward Voltage  
V
I
I
R
R
= 5 mA  
−
R
I
R
V
V
= 20 V  
= 75 V  
25  
5
nA  
mA  
V
R
R
−
V
F
1N4448WS / 1N914BWS  
I = 5 mA  
0.62  
−
0.72  
1
F
1N4148WS  
I = 10 mA  
F
1N4448WS / 1N914BWS  
I = 100 mA  
F
−
1
C
Diode Capacitance  
V
= 0, f = 1.0 MHz  
−
4
pF  
ns  
O
R
T
RR  
Reverse Recovery Time  
I = 10 mA, I = 60 mA,  
−
4
F
RR  
R
I
= 1 mA, R = 100 W  
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2021 − Rev. 3  
1N4148WS/D  
 
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1N4148WS 替代型号

型号 品牌 替代类型 描述 数据表
MMDL914T1G ONSEMI

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