Datasheet > 1N4148WS_12

1N4148WS_12

更新时间： 2024-11-15 12:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		信号二极管
页数	文件大小	规格书
4页	243K
描述
Small Signal Diodes

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数据手册

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1N4148WS_12 数据手册

April 2012

1N4148WS / 1N4448WS / 1N914BWS

Small Signal Diodes

Features

• General Purpose Diodes

• Fast Switching Device (T_RR< 4.0ns)

• Very Small and Thin SMD Package

• Moisture Level Sensitivity 1

• Pb-free Version and RoHS Compliant

• Matte Tin (Sn) Lead Finish

Device Marking Code

Device Type

1N4148WS

1N4448WS

1N914BWS

Device Marking

1. Cathode

2. Anode

SOD-323 Flat Lead

Band Indicates Cathode

ELECTRICAL SYMBOL

• Green Mold Compound

Absolute Maximum Ratings* T_a= 25°C unless otherwise noted

Parameter

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Continuous Forward Current

Value

100

Units

Symbol

V_RSM

V_RRM

I_FRM

I_O

300

°C

150

T_J

Operating Junction Temperature

Storage Temperature Range

+150

T_STG

-55 to +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Thermal Resistance, Junction to Ambient *

Value

200

Units

Symbol

P_D

R_θJA

500

°C/W

* Device mounted on FR-4 PCB minimum land pad.

Electrical Characteristics T_a= 25°C unless otherwise noted

Parameter

Breakdown Voltage

Test Conditions

I_R= 100 μA

I_R= 5 μA

Units

Symbol

Min.

Typ.

Max.

BV_R

100

I_R

Reverse Current

V_R= 20 V

V_R= 75 V

μA

V_F

Forward Voltage 1N4448WS/914BWS I_F= 5 mA

1N4148WS I_F= 10 mA

1N4448WS/914BWS I_F= 100 mA

0.62

0.72

C_O

Diode Capacitance

Reverse Recovery Time

V_R= 0, f = 1 MHz

T_RR

I_F= 10 mA, I_R= 60 mA,

I_RR= 1 mA, R_L= 100 Ω

1N4148WS / 1N4448WS / 1N914BWS Rev. B0

www.fairchildsemi.com

12 3 4

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