Datasheet > 1N4148WS

1N4148WS

更新时间： 2024-11-01 05:56:39

品牌	Logo	应用领域
TSC		二极管开关光电二极管
页数	文件大小	规格书
2页	96K
描述
200mW High Speed SMD Switching Diode

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中文翻译

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数据手册

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1N4148WS 数据手册

1N4148WS/1N4448WS/1N914BWS

200mW High Speed SMD Switching Diode

Small Signal Diode

SOD-323F

Features

Fast switching device(Trr<4.0nS)

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Dimensions

Min

Max

Min

Max

Mechanical Data

Case : Flat lead SOD-323 small outline plastic package

1.15 1.35 0.045 0.053

2.30 2.70 0.091 0.106

0.25 0.40 0.010 0.016

1.60 1.80 0.063 0.071

0.80 1.00 0.031 0.039

0.05 0.20 0.002 0.008

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Polarity : Indicated by cathode band

Weight : 4.85±0.5 mg

Ordering Information

Part No.

Packing

Package

1NxxxxWS RR

3Kpcs / 7" Reel

SOD-323F

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

P^D

Value

200

Units

Power Dissipation

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Mean Forward Current

V^RSM

V^RRM

I^FRM

100

300

°C/W

°C

150

Thermal Resistance (Junction to Ambient) (Note 1)

Junction and Storage Temperature Range

RθJA

TJ, TSTG

500

-65 to + 150

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

100

IR=100uA

Reverse Breakdown Voltage

IR=5uA

V(BR)

Forward Voltage

0.62

0.72

1.0

1N4448WS, 1N914BWS I^F=5.0mA

V^F

1N4148W

IF=10.0mA

1N4448WS, 1N914BWS I^F=100.0mA

μA

V^R=20V

Reverse Leakage Current

V^R=75V

5.0

4.0

Junction Capacitance

VR=0, f=1.0MHz

Trr

Reverse Recovery Time (Note 2)

Notes:1. Valid provided that electrodes are kept at ambient temperature

Notes:2. Reverse Recovery Test Conditions: I_F=10mA, I_R=60mA, R_L=100Ω, I_RR=1mA

Version : C09

中文翻译

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