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1N4148W_09 PDF预览

1N4148W_09

更新时间: 2024-11-18 07:21:15
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德欧泰克 - DIOTEC 信号二极管
页数 文件大小 规格书
2页 105K
描述
Surface Mount Small Signal Diodes

1N4148W_09 数据手册

 浏览型号1N4148W_09的Datasheet PDF文件第2页 
1N4148W, 1N4448W  
Version 2009-01-28  
1N4148W, 1N4448W  
Surface Mount Small Signal Diodes  
Kleinsignal-Dioden für die Oberflächenmontage  
Power dissipation – Verlustleistung  
400 mW  
75 V  
Repetitive peak reverse voltage  
eriodische Spitzensperrspannung  
2.7  
Plastic case – Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
SOD-123  
0.01 g  
0.6  
0.1  
Type  
Code  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
3.8  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
1N4148W, 1N4448W  
Power dissipation − Verlustleistung  
Ptot  
IFAV  
IFRM  
400 mW 1)  
150 mA 1)  
300 mA 1)  
Max. average forward current – Dauergrenzstrom (dc)  
Repetitive peak forward current – Periodischer Spitzenstrom  
Non repetitive peak forward surge current  
toßstrom-Grenzwert  
tp ≤ 1 s  
p ≤ 1 µs  
IFSM  
IFSM  
500 mA 1)  
A
Repetitive peak reverse voltage – Periodische Spitzensperrspannung  
Non repetitive peak reverse voltage – Stoßspitzensperrspannung  
VRRM  
VRSM  
75 V  
100 V  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Forward voltage  
1N4148W IF = 10 mA  
VF  
< 1.0 V  
urchlass-Spannung  
1N4448W IF = 5 mA  
F = 100 mA  
VF  
0.62...0.72 V  
1 V  
F
Leakage current – Sperrstrom 2)  
VR = 20 V  
R = 75 V  
IR  
IR  
< 25 nA  
5 µA  
Leakage current – Sperrstrom, Tj = 125°C 2)  
VR = 20 V  
R = 75 V  
IR  
IR  
< 30 µA  
50 µA  
Max. junction capacitance – Max. Sperrschichtkapazität  
VR = 0 V, f = 1 MHz  
CT  
Trr  
4 pF  
< 4 ns  
Reverse recovery time – Sperrverzug  
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA  
Thermal resistance junction to ambient air  
ärmewiderstand Sperrschicht – umgebende Luft  
RthA  
< 400 K/W 1)  
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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