Datasheet > 1N4148W

1N4148W

更新时间： 2024-11-18 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管开关光电二极管 IOT
页数	文件大小	规格书
2页	442K
描述
Fast Switching Speed

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中文翻译

获取价格

数据手册

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1N4148W 数据手册

1N4148W

SOD-123

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

MARKING: T6,T4

Maximum Ratings and Electrical Characteristics, Single Diode @T^a=25℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

V_RM

100

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

300

150

I_O

Peak forward surge current @=1.0μs

2.0

1.0

I_FSM

@=1.0s

Power Dissipation

500

250

℃/W

Thermal Resistance from Junction

to Ambient

R_θJA

Junction temperature

Storage temperature

T_j

150

℃

T_STG

-65~+150

Electrical Ratings @T^a=25℃

Parameter

Symbol

V_F1

Min.

Typ.

Max. Unit

Conditions

I_F=1mA

0.715

0.855

1.0

1.25

V_F2

I_F=10mA

I_F=50mA

I_F=150mA

V_R=75V

Forward voltage

V_F3

V_F4

I_R1

μA

Reverse current

I_R2

V_R=20V

Capacitance between terminals

Reverse Recovery Time

C_T

V_R=0V,f=1MHz

I_F=I_R=10mA

t_rr

Irr=0.1XI_R,R_L=100Ω

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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