Datasheet > 1N4148W

1N4148W

更新时间： 2024-11-14 06:20:19

品牌	Logo	应用领域
商升特 - SEMTECH		信号二极管光电二极管 IOT
页数	文件大小	规格书
3页	231K
描述
Silicon Epitaxial Planar Small Signal Diode

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1N4148W 数据手册

1N4148W

Silicon Epitaxial Planar Small Signal Diode

Features

PINNING

• SOD-123 package

DESCRIPTION

Cathode

• Fast switching

• These diodes are also available in other case

style including the DO-35 case with the type

Anode

designation 1N4148, the MiniMELF case with the

type designation LL4148 and the MicroMELF

case with the type designation MCL4148.

Top View

Marking Code: "W1"

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

Value

100

Unit

Peak Reverse Voltage

Reverse Voltage

V_R

Average Rectified Current Half Wave Rectification with

I_F(AV)

150

Resistive Load f ≥ 50 Hz

Non-repetitive Peak Forward Surge Current at t = 1 μs

Power Dissipation

I_FSM

P_tot

R_θJA

T_J

400

Thermal Resistance from Junction to Ambient Air

Junction Temperature

450

C/W

150

Storage Temperature Range

T_stg

- 65 to + 150

Electrical Characteristics (T_a= 25 C)

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 10 mA

V_F

Reverse Current

at V_R= 20 V

at V_R= 75 V

µA

I_R

at V_R= 20 V, T_J= 150 C

Capacitance

at V_F= V_R= 0 V

Reverse Recovery Time

from I_F= 10 mA to I_R= 1 mA, V_R= 6 V, R_L= 100 Ω

C_tot

t_rr

Voltage Rise when Switching On (tested with 50 mA Pulses

t_p= 0.1 μs, Rise Time < 30 ns, f_p= 5 to 100 KHz)

V_fr

2.5

Rectification Efficiency

at f = 100 MHz, V_RF= 2 V

η_v

0.45

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 21/01/2008

12 3

中文翻译

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