5秒后页面跳转
1N3670AR PDF预览

1N3670AR

更新时间: 2024-11-30 13:03:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 152K
描述
Rectifier Diode, 1 Phase, 1 Element, 12A, 700V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

1N3670AR 技术参数

生命周期:Active零件包装代码:DO-4
包装说明:DO-4, 1 PIN针数:1
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.65
应用:GENERAL PURPOSE外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-203AA
JESD-30 代码:O-MUPM-D1最大非重复峰值正向电流:240 A
元件数量:1相数:1
端子数量:1最大输出电流:12 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大重复峰值反向电压:700 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
Base Number Matches:1

1N3670AR 数据手册

 浏览型号1N3670AR的Datasheet PDF文件第2页浏览型号1N3670AR的Datasheet PDF文件第3页浏览型号1N3670AR的Datasheet PDF文件第4页浏览型号1N3670AR的Datasheet PDF文件第5页浏览型号1N3670AR的Datasheet PDF文件第6页 
1N1...A, 1N36..A Series  
Vishay High Power Products  
Medium Power  
Silicon Rectifier Diodes, 12 A  
FEATURES  
• Voltage ratings from 50 to 1000 V  
RoHS  
• High surge capability  
• Low thermal impedance  
• High temperature rating  
COMPLIANT  
• Can be supplied as JAN and JAN-TX devices in  
accordance with MIL-S-19500/260  
DO-203AA (DO-4)  
• RoHS compliant  
PRODUCT SUMMARY  
IF(AV)  
12 A  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
12 (1)  
150 (1)  
UNITS  
A
IF(AV)  
TC  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
230  
240 (1)  
IFSM  
I2t  
A
260  
A2s  
240  
TC  
- 65 to 200  
50 to 1000 (1)  
°C  
V
VRRM  
Range  
Note  
(1)  
JEDEC registered values  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
REPETITIVE PEAK  
REVERSE VOLTAGE  
V
V
RSM, MAXIMUM  
V
R(RMS), MAXIMUM RMS  
REVERSE VOLTAGE  
V
V
RM, MAXIMUM DIRECT  
REVERSE VOLTAGE  
V
NON-REPETITIVE PEAK  
REVERSE VOLTAGE  
V
TYPE NUMBER (2)  
T
C = - 65 °C TO 200 °C  
TC = - 65 °C TO 200 °C  
TC = - 65 °C TO 200 °C  
100 (1)  
TC = - 65 °C TO 200 °C  
50 (1)  
1N1199A  
1N1200A  
1N1201A  
1N1202A  
1N1203A  
1N1204A  
1N1205A  
1N1206A  
1N3670A  
1N3671A  
1N3672A  
1N3673A  
50 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
35 (1)  
70 (1)  
105 (1)  
140 (1)  
210 (1)  
280 (1)  
350 (1)  
420 (1)  
490  
200 (1)  
300 (1)  
350 (1)  
450 (1)  
600 (1)  
700 (1)  
800 (1)  
900 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
700 (1)  
700 (1)  
800 (1)  
900 (1)  
1000 (1)  
560  
1000 (1)  
1100 (1)  
1200 (1)  
800 (1)  
900 (1)  
1000 (1)  
630  
700  
Notes  
(1)  
JEDEC registered values  
Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA  
(2)  
Document Number: 93493  
Revision: 24-Jun-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

与1N3670AR相关器件

型号 品牌 获取价格 描述 数据表
1N3670ARE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 22A, 700V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI
1N3670AR-PBF DIGITRON

获取价格

Rectifier Diode
1N3670E3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 22A, 700V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI
1N3670RA MICROSEMI

获取价格

Rectifier Diode, 1 Element, 22A, 700V V(RRM), DO4-2
1N3670RE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 22A, 700V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI
1N3671 DIOTEC

获取价格

Silicon-Power Rectifiers
1N3671 MICROSEMI

获取价格

SILICON POWER RECTIFIER
1N3671A VISHAY

获取价格

Medium Power Silicon Rectifier Diodes, 12 A
1N3671A MICROSEMI

获取价格

Military Silicon Power Rectifier
1N3671A INFINEON

获取价格

12 AMP MEDIUM POWER SILICON RECTIFIER DIODES