Datasheet > 1N3670AR-PBF

1N3670AR-PBF

更新时间： 2024-11-30 14:46:07

品牌	Logo	应用领域
DIGITRON		二极管
页数	文件大小	规格书
3页	1043K
描述
Rectifier Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N3670AR-PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.65
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1N3670AR-PBF 数据手册

1N3670A-1N3673A

STANDARD RECOVERY RECTIFIER

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Characteristics

Repetitive peak reverse voltage

Maximum RMS reverse voltage

Non-repetitive peak reverse voltage

Average forward current

Symbol

1N3670

1N3671

1N3672

900V

1N3673

1000V

700V

Test Conditions

V_RRM

700V

800V

V_RMS

490V

560V

630V

V_RSM

900V

1000V

1100V

1200V

I_F(AV)

12A

180° sinusoidal conduction

Following any

Maximum surge current

rated load

condition and

rated V_RRM

230A

240A

@50Hz

@60Hz

applied

I_FSM

Following any

rated load

275A

285A

@50Hz

@60Hz

condition and

V_RRMapplied

following

surge = 0

With rated

V_RRMapplied

following

260A²s

240A²s

t = 10ms

t = 8.3ms

surge, initial

Maximum I²t for fusing

I²t

T_J= 200°C

With V_RRM= 0

following

surge, initial

370A²s

340A²s

t = 10ms

t = 8.3ms

T_J= 200°C

Maximum I²√t for individual device

fusing

t = 0.1 to 10ms, V_RRM= 0

following surge

I²√t

3715 A²√s

Maximum peak forward voltage

V_FM

1.35V

I_F(AV)= 12A, T_C= 25°C

Maximum average reverse current

V_RRM= 700V

0.9mA

0.8mA

0.7mA

0.6mA

V_RRM= 800V

I_R(AV)

Max. rated I_F(AV)and T_C

V_RRM= 900V

V_RRM= 1000V

Storage temperature range

T_stg

T_J

-65° to 200°C

Operating junction temperature range

Maximum thermal resistance

R_ӨJC

2.0C/W junction to case

Rev. 20150317

12 3

中文翻译

下载PDF

与1N3670AR-PBF相关器件

型号	品牌	获取价格	描述	数据表
1N3670E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 22A, 700V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI
1N3670RA	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 22A, 700V V(RRM), DO4-2
1N3670RE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 22A, 700V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI
1N3671	DIOTEC	获取价格	Silicon-Power Rectifiers
1N3671	MICROSEMI	获取价格	SILICON POWER RECTIFIER
1N3671A	VISHAY	获取价格	Medium Power Silicon Rectifier Diodes, 12 A
1N3671A	MICROSEMI	获取价格	Military Silicon Power Rectifier
1N3671A	INFINEON	获取价格	12 AMP MEDIUM POWER SILICON RECTIFIER DIODES
1N3671A	NJSEMI	获取价格	Diode Switching 800V 22A 2-Pin DO-4
1N3671AR	MICROSEMI	获取价格	MILITARY SILICON POWER RECTIFIER