生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | GERMANIUM |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大功率耗散: | 0.08 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 100 V | 最大反向恢复时间: | 0.3 µs |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N276BK | CENTRAL |
获取价格 |
Rectifier Diode, 1 Element, 0.04A, 50V V(RRM), Germanium, DO-7 |
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1N276BKLEADFREE | CENTRAL |
获取价格 |
Rectifier Diode, 1 Element, 0.04A, 50V V(RRM), Germanium, DO-7 |
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1N276R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 100V V(RRM), Germanium |
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1N276X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 100V V(RRM), Germanium |
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1N277 | MCC |
获取价格 |
110 Volt Germanium Diode |
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1N277 | MICROSEMI |
获取价格 |
Optimized for Radio Frequency Response |
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1N277 | NJSEMI |
获取价格 |
GERMANIUM DIODES |
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1N277 | SUNMATE |
获取价格 |
Switching Diodes Switch detector |
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1N277BK | CENTRAL |
获取价格 |
Rectifier Diode, 1 Element, 0.1A, 100V V(RRM), Germanium, DO-7 |
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1N277BKLEADFREE | CENTRAL |
获取价格 |
Rectifier Diode, 1 Element, 0.1A, 100V V(RRM), Germanium, DO-7 |
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