生命周期: | Active | 包装说明: | METAL, DO4, 1 PIN |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.72 |
Is Samacsys: | N | 应用: | POWER |
外壳连接: | ANODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-203AA | JESD-30 代码: | O-MUPM-D1 |
最大非重复峰值正向电流: | 250 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 200 °C | 最低工作温度: | -65 °C |
最大输出电流: | 22 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
最大重复峰值反向电压: | 200 V | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N2785 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER |
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1N2785R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 22A, 400V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI |
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1N2785RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 22A, 400V V(RRM), Silicon, DO-203AA, METAL, DO4, 1 PI |
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1N2786 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER |
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1N2786E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 200V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P |
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1N2786R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 200V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P |
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1N2787 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER |
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1N2787E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 400V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P |
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1N2787R | MICROSEMI |
获取价格 |
暂无描述 |
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1N2787RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 40A, 400V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P |
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