Datasheet > 1N17_11

1N17_11

更新时间： 2024-11-18 07:20:35

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	664K
描述
1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts

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中文翻译

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数据手册

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1N17_11 数据手册

1N17

THRU

1N19

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

High Efficiency and High Current Capability

Low Forward Voltage Drop and Low Power loss

Metal Silicon junction, majority carrier conduction

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

1.0 Amp Schottky

Barrier Rectifier

20 to 40 Volts

Marking : Cathode band and type number

Maximum Ratings

R-1

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +125°C

Typical Thermal Resistance: 50^oC/W junction to Ambient

For capacitive load. Derate current by 20%

Maximum

Recurrent

Peak Reverse

Voltage

Maximum DC

MCC

Part Number

Maximum

RMS

Voltage

14V

Blocking

Voltage

1N17

1N18

1N19

20V

30V

40V

20V

30V

40V

21V

28V

Cathode Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I_(AV)

1.0A

T_A= 90°C

Rectified Current

Peak Forward Surge

Current

I_FSM

25A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

V_F

1N17

1N18

1N19

0.45V

0.55V

0.60V

I_FM= 1.0A;

T_C= 25°C

DIMENSIONS

Maximum DC

INCHES

DIM

NOTE

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

0.5mA

10mA

T_C= 25°C

T_C= 100°C

MIN

MAX

0.140

0.102

0.024

-----

MIN

2.90

2.30

0.50

20.00

MAX

3.50

2.60

0.60

-----

I_R

0.116

0.091

0.020

0.787

Measured at

1.0MHz, V_R=4.0V

110pF

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

www.mccsemi.com

Revision: A

2011/01/01

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