Datasheet > 1N18

1N18

更新时间： 2024-11-18 06:16:35

品牌	Logo	应用领域
JINANJINGHENG		二极管
页数	文件大小	规格书
2页	98K
描述
SHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N18 数据手册

1N17 THRU 1N19

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 1.0Ampere

E M I C O N D U C T O R

FEATURES

R-1

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Metal silicon junction ,majority carrier conduction

Low power loss ,high efficiency

High current capability ,Low forward voltage drop

High surge capability

For use in low voltage ,high frequency inverters,free wheeling ,and polarity

protection applications

MECHANICAL DATA

Case: R-1 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026

Polarity: color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight: 0.007ounce,0.20 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive

load. For capacitive load, derate by 20%.)

Symbols

1N17

1N18

1N19

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

Volts

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

Maximum average forward rectified

VRSM

Volts

Amp

1.0

I(AV)

IFSM

current 0.375"(9.5mm)lead length at TL=90 C

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method) at T^L=70 C

25.0

Amps

Volts

Maximum instantaneous forward voltage at 1.0 A(note 1 )

Maximum instantaneous forward voltage at 3.1 A(note 1 )

Maximum instantaneous reverse

0.450

0.750

0.550

0.875

0.600

0.900

0.5

10.0

T_A=25 C

T_A=100 C

current at rated DC blocking

voltage(Note 1)

110.0

Typical junction capacitance(Note 3)

50.0

15.0

Typical thermal resistance(Note 2)

C/W

Operating junction and storage temperature range

-65 to +125

T^J,TSTG

Notes: 1.Pulse test: 300 s pulse width,1% duty cycle

2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted , 0.5"(12.7mm)lead length

3.Measured at 1.0MHz and reverse voltage of 4.0 volts

1-5

NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096

WWW.JIFUSEMICON.COM

JINAN JINGHENG CO., LTD.

中文翻译

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与1N18相关器件

型号	品牌	获取价格	描述	数据表
1N1803	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803A	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803AE3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803E3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804E3	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805A	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805AE3	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN

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