Datasheet > 1N18

1N18

更新时间： 2024-10-02 06:20:23

品牌	Logo	应用领域
顺烨 - SHUNYE		二极管
页数	文件大小	规格书
2页	233K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N18 数据手册

1N17 THRU 1N19

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere

FEATURES

R-1

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

1.0 (25.4)

MIN.

Low power loss,high efficiency

High current capability,low forward voltage drop

High surge capability

0.102 (2.6)

0.091 (2.3)

DIA.

For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications

0.140(3.50)

0.114(2.90)

High temperature soldering guaranteed:

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

MECHANICAL DATA

0.025 (0.65)

0.021 (0.55)

DIA.

Case: R-1 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

Mounting Position: Any

Weight:0.007 ounce, 0.20 gramS

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

1N17

1N18

1N19

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TL=90 C

Peak forward surge current

I(AV)

1.0

Amp

IFSM

25.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.450

0.550

0.600

Maximum instantaneous forward voltage at 1.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

1.0

10.0

TA=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

110.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +125

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

中文翻译

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与1N18相关器件

型号	品牌	获取价格	描述	数据表
1N1803	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803A	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803AE3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803E3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804E3	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805A	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805AE3	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN

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