Datasheet > 1N18

1N18

更新时间： 2024-11-19 14:53:11

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	973K
描述
肖特基二极管

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技术参数
数据手册

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1N18 技术参数

Case Style：	R-1	IF（A）：	1
Maximum recurrent peak reverse voltage：	30	Peak forward surge current：	20
Maximum instantaneous forward voltage：	0.55	@IF(A)：	1
Maximum reverse current：	1	TJ(℃）：	/
class：	Diodes

1N18 数据手册

1N17-1N19

Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 40 V

CURRENT: 1.0 A

Features

R - 1

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

For use in low voltage,high frequency inverters free

wheeling,and polarityprotection applications

xxxx

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case:JEDEC R--1,molded plastic

Polarity: Color band denotes cathode

Weight: 0.007 ounces,0.20 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

IN17

IN18

IN19

UNITS

Maximum recurrent peak reverse voltage

Maximum RMS v oltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forw ard rectified current

1.0

I_F(AV)

I_FSM

V_F

9.5mm lead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

25.0

superimposed on rated load @T_J=70

0.45

0.75

0.55

0.875

Maximum instantaneous forw ard voltage @ 1.0A

0.60

0.90

z (Note 1)

@ 3.0A

Maximum reverse current

@T_A=25

@T_A=100

1.0

I_R

at rated DC blocking voltage

10.0

Typical junction capacitance (Note2)

Typical thermal resistance (Note3)

110

C_J

R_θ

Operating junction temperature range

- 55 ---- + 125

- 55 ---- + 150

T_J

Storage temperature range

T_STG

NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.

2. Measured at 1.0MH_Zand applied reverse voltage of 4.0V DC.

3.Thermal resistance junction to ambient

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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与1N18相关器件

型号	品牌	获取价格	描述	数据表
1N1803	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803A	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803AE3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803E3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804E3	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805A	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805AE3	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN

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