Datasheet > 1N18

1N18

更新时间： 2024-10-02 06:19:03

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
2页	149K
描述
SCHOTTKY BARRIER RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N18 数据手册

1N17 ~ 1N19

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage – 20 to 40 Volts

Forward current – 1.0 Amperes

R-1

Features

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency

• High current capability low forward voltage drop

• High surge capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Mechanical data

• Case: R-1 molded plastic body

• Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026

• Polarity: color band denotes cathode end

• Mounting Position: Any

Absolute Maximum Ratings and Characteristics

Ratings at 25^oC ambient temperature unless otherwise specified.

Symbols

V_RRM

V_RMS

1N17

1N18

1N19

Units

Volts

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Maximum DC Blocking Voltage

V_DC

Maximum Non-repetitive Peak Reverse Voltage

V_RSM

Maximum Average Forward Rectified Current

0.375” (9.5mm) Lead Length At T_L= 90 ^OC

I_(AV)

Amps

Peak Forward Surge Current, 8.3ms Single half sine-wave

Superimposed On Rated Load (JEDEC method) At T_L= 70 ^OC

I_FSM

Maximum Instantaneous Forward Voltage At 1 A

Maximum Instantaneous Forward Voltage At 3.1 A

V_F

0.45

0.75

0.550

0.875

0.60

0.90

Volts

Maximum Instantaneous Reverse Current at

Rated DC Blocking Voltage

T_A= 25^OC

T_A= 100 ^OC

0.5

mAmps

I_R

R_θJA

R_θJL

Typical Thermal Resistance

Typical Junction Capacitance

^OC/W

C_J

110

^OC

Storage and Operating Junction Temperature Range

T_J,T_S

-65 to +125

Notes: 1. Pulse test: 300μs pulse width, 1% duty cycle

2. Thermal resistance (from junction to ambient) Vertical P.B.C. MOUNTED, 0.5” (12.7 mm) lead length

3. Measured at 1.0MHz and reverse voltage of 4.0 volts

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/12/2002

中文翻译

下载PDF

与1N18相关器件

型号	品牌	获取价格	描述	数据表
1N1803	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803A	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803AE3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1803E3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1804E3	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805A	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN
1N1805AE3	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN