是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-4 |
包装说明: | O-MUPM-D1 | 针数: | 1 |
Reach Compliance Code: | compliant | HTS代码: | 8541.10.00.80 |
风险等级: | 5.43 | 其他特性: | HIGH RELIABILITY |
应用: | POWER | 外壳连接: | CATHODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.1 V |
JEDEC-95代码: | DO-203AA | JESD-30 代码: | O-MUPM-D1 |
JESD-609代码: | e0 | 最大非重复峰值正向电流: | 400 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最高工作温度: | 200 °C |
最低工作温度: | -65 °C | 最大输出电流: | 25 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 200 V |
子类别: | Rectifier Diodes | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N1202CE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 P |
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1N1202-CHIP | SSDI |
获取价格 |
Diode, |
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1N1202CR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 P |
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1N1202CRE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 P |
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1N1202RA | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier |
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1N1202RA | MOTOROLA |
获取价格 |
12A, 200V, SILICON, RECTIFIER DIODE, DO-203AA |
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1N1202RA | NJSEMI |
获取价格 |
Diode Switching 200V 12A 2-Pin DO-4 |
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1N1202RAE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-203AA, GLASS METAL, DO2 |
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1N1202RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-203AA, GLASS METAL, DO2 |
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1N1203 | POWEREX |
获取价格 |
Rectifier Diode, 1 Element, 12A, 300V V(RRM) |
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