5秒后页面跳转
1N1203AHR PDF预览

1N1203AHR

更新时间: 2024-11-28 07:19:51
品牌 Logo 应用领域
DIGITRON 二极管
页数 文件大小 规格书
3页 785K
描述
Rectifier Diode

1N1203AHR 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.71
其他特性:HIGH RELIABILITY应用:POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:DO-4
JESD-30 代码:O-MUPM-D1JESD-609代码:e0
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:1
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:12 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:MIL-19500
最大重复峰值反向电压:300 V最大反向电流:10 µA
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N1203AHR 数据手册

 浏览型号1N1203AHR的Datasheet PDF文件第2页浏览型号1N1203AHR的Datasheet PDF文件第3页 
1N1199(A,B)-1N1206(A,B)  
SILICON POWER RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Parameter  
Symbol  
1N1199  
1N1200  
1N1201  
1N1202  
1N1203  
1N1204  
1N1205  
1N1206  
Peak reverse voltage  
VR  
50V  
100V  
150V  
200V  
300V  
400V  
500V  
600V  
Operating & storage  
temperature range  
TJ, Tstg  
RθJC  
-65 to +200°C  
Maximum thermal resistance  
Mounting torque  
2.5°C/W junction to case  
25-30 inch pounds  
Weight  
.16 ounces (5.0 grams) typical  
Add “R” to part numbers for reverse polarity.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
IF(AV)  
IFSM  
Value  
12 Amps  
250 Amps  
260 A2s  
1.2 Volts  
10 µA  
Test Condition  
Average forward current  
TC = 170°C, half-sine wave, RθJC = 2.5°C/W  
8.3ms, half-sine, TJ = 200°C  
Maximum surge current  
Maximum I2t for fusing  
I2t  
Maximum peak forward voltage  
Maximum peak reverse current  
Maximum peak reverse current  
Maximum recommended operating frequency  
VFM  
IRM  
IFM = 30A: TJ = 25°C*  
VRRM, TJ = 25°C  
IRM  
1.0 mA  
VRRM, TJ = 150°C*  
10 kHz  
Pulse test: pulse width 300µsec. Duty cycle 2%  
Rev. 20150317  

与1N1203AHR相关器件

型号 品牌 获取价格 描述 数据表
1N1203APBF VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N1203A-PBF DIGITRON

获取价格

Rectifier Diode
1N1203AR VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N1203ARHR DIGITRON

获取价格

Rectifier Diode
1N1203ARPBF INFINEON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA,
1N1203ARPBF VISHAY

获取价格

暂无描述
1N1203B MICROSEMI

获取价格

Silicon Power Rectifier
1N1203B NJSEMI

获取价格

Diode Switching 300V 12A 2-Pin DO-4
1N1203BE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-203AA, GLASS METAL, DO2
1N1203BR DIGITRON

获取价格

Rectifier, Standard Recovery; Max Peak Repetitive Reverse Voltage: 12; Max TMS Bridge Inpu