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ZTX657SM PDF预览

ZTX657SM

更新时间: 2024-10-30 13:16:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管高压局域网
页数 文件大小 规格书
2页 54K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX657SM 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:TO-92 COMPATIBLE, E-LINE PACKAGE-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.21
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PSSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

ZTX657SM 数据手册

 浏览型号ZTX657SM的Datasheet PDF文件第2页 
NPN SILICON PLANAR MEDIUM POWER  
ZTX656  
ZTX657  
HIGH VOLTAGE TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
300 Volt VCEO  
0.5 Amp continuous current  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX656  
200  
ZTX657  
300  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
200  
300  
5
1
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
0.5  
1
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
ZTX656  
ZTX657  
PARAMETER  
SYMBOL  
V(BR)CBO  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
200  
200  
5
300  
300  
5
V
V
V
IC=100µA, IE=0  
IC=10mA, IB=0*  
IE=100µA, IC=0  
VCB=160V, IE=0  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
100  
0.5  
1
nA  
nA  
100  
100  
VCB=200V, IE=0  
Emitter Cut-Off  
Current  
IEBO  
nA  
VEB=3V, IC=0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
0.5  
1
V
IC=100mA, IB=10mA*  
IC=100mA, IB=10mA*  
IC=100mA, VCE=5V*  
Base-Emitter  
Saturation Voltage  
V
Base-Emitter  
Turn-On Voltage  
1
1
V
Static Forward  
Current Transfer  
Ratio  
50  
40  
50  
40  
IC=100mA, VCE=5V  
IC=10mA, VCE=5V  
Transition  
Frequency  
fT  
30  
30  
MHz IC=10mA, VCE=20V  
f=20MHz  
3-227  

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