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ZTX658_02 PDF预览

ZTX658_02

更新时间: 2024-10-30 03:07:39
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管高压局域网
页数 文件大小 规格书
3页 117K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

ZTX658_02 数据手册

 浏览型号ZTX658_02的Datasheet PDF文件第2页浏览型号ZTX658_02的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH VOLTAGE TRANSISTOR  
ZTX658  
ISSUE 2 – APRIL 2002  
FEATURES  
*
*
*
400 Volt VCEO  
0.5 Amp continuous current  
P
tot=1 Watt  
APPLICATIONS  
Telephone dialler circuits  
C
B
E
*
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
400  
5
V
V
Peak Pulse Current  
1
A
Continuous Collector Current  
IC  
500  
mA  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO 400  
V
IC=100µA  
Collector-Emitter  
V(BR)CEO) 400  
V
V
IC=10mA*  
IE=100µA  
VCB=320V  
VCE=320V  
VEB=4V  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
5
Collector Cut-Off  
Current  
100  
100  
100  
nA  
nA  
nA  
Collector Cut-Off  
Current  
ICBO  
Emitter Cut-Off Current IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.3  
0.25  
0.5  
V
V
V
IC=20mA, IB=1mA  
IC=50mA, IB=5mA*  
IC=100mA, IB=10mA*  
Base-Emitter  
VBE(sat)  
VBE(on)  
0.9  
V
IC=100mA, IB=10mA*  
Saturation Voltage  
Base-Emitter  
Turn On Voltage  
0.9  
V
IC=100mA, VCE=5V*  
Static Forward Current hFE  
Transfer Ratio  
50  
50  
40  
IC=1mA, VCE=5V*  
IC=100mA, VCE=5V*  
IC=200mA, VCE=10V*  
3-229  

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