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ZTX658 PDF预览

ZTX658

更新时间: 2024-09-12 22:34:03
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管开关高压PC局域网
页数 文件大小 规格书
3页 62K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

ZTX658 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-W3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.17最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:O-PBCY-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzVCEsat-Max:0.5 V
Base Number Matches:1

ZTX658 数据手册

 浏览型号ZTX658的Datasheet PDF文件第2页浏览型号ZTX658的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH VOLTAGE TRANSISTOR  
ISSUE 1 – APRIL 94  
ZTX658  
FEATURES  
*
*
*
400 Volt VCEO  
0.5 Amp continuous current  
Ptot=1 Watt  
APPLICATIONS  
Telephone dialler circuits  
C
B
E
*
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
400  
5
V
V
Peak Pulse Current  
1
A
Continuous Collector Current  
IC  
500  
mA  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 400  
TYP.  
MAX. UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
IC=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO) 400  
V
V
IC=10mA*  
IE=100µA  
VCB=320V  
VCE=320V  
VEB=4V  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
5
Collector Cut-Off  
Current  
100  
100  
100  
nA  
nA  
nA  
Collector Cut-Off  
Current  
ICBO  
Emitter Cut-Off Current IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.3  
0.25  
0.5  
V
V
V
IC=20mA, IB=1mA  
IC=50mA, IB=5mA*  
IC=100mA, IB=10mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
0.9  
V
IC=100mA, IB=10mA*  
Base-Emitter  
Turn On Voltage  
0.9  
V
IC=100mA, VCE=5V*  
Static Forward Current hFE  
Transfer Ratio  
50  
50  
40  
IC=1mA, VCE=5V*  
IC=100mA, VCE=5V*  
IC=200mA, VCE=10V*  
3-229  

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