Datasheet > ZTX3866

ZTX3866

更新时间： 2024-10-29 21:53:59

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描述
NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR

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数据手册

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ZTX3866 数据手册

NPN SILICON PLANAR R.F.

ZTX3866

MEDIUM POWER TRANSISTOR

ISSUE 2 MARCH 94

FEATURES

1W P_OUTat 175 MHz, 28V, 18dB typical

1W P_OUTat 400 MHz, 28V, 9.7dB typical

High P_tot

High efficiency

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_CER

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_CM

3.5

Continuous Collector Current

Power Dissipation

400

°C

P_tot

350

Operating and Storage Temperature Range

T_j:T_stg

-55 to +175

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

V_(BR)CBO

MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=100µA, I_E=0

I_C=5mA, I_B=0

I_E=100µA, I_E=0

Collector-Emitter

Breakdown Voltage

V_(BR)CEO(sus)30

V_(BR)EBO3.5

I_CEO

Emitter-Base

Breakdown Voltage

Collector Emitter

Cut-Off Current

V_CB=28V, I_B=0

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

1.0

I_C=100mA, I_B=20mA

IC=5mA, R_BE=10Ω

I_C=50mA, V_CE=5V

Collector-Emitter

Sustaining Voltage

V_(BR)CER(sus)55

Static Forward

Current Transfer

h_FE

f_T

200

3.0

Transitional

Frequency

400

700

MHz

I_C=25mA, V_CE=15V

f=100MHz

Output Capacitance

R.F. Power Output

Efficiency

C_obo

P_OUT

V_CB=30V, I_E=0, f=1MHz

700

900

V_CC=28V, P_IN=100mW

f=400MHz

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