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ZTX415STOB PDF预览

ZTX415STOB

更新时间: 2024-02-20 16:10:32
品牌 Logo 应用领域
捷特科 - ZETEX 开关晶体管
页数 文件大小 规格书
2页 66K
描述
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX415STOB 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TO-92 COMPATIBLE, E-LINE PACKAGE-3Reach Compliance Code:not_compliant
HTS代码:8541.21.00.95风险等级:5.17
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):25JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified参考标准:CECC
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

ZTX415STOB 数据手册

 浏览型号ZTX415STOB的Datasheet PDF文件第2页 
NPN SILICON PLANAR  
ZTX415  
AVALANCHE TRANSISTOR  
ISSUE 4 - NOVEMBER 1995  
FEATURES  
*
*
*
Specifically designed for Avalanche mode operation  
60A Peak Avalanche Current (Pulse width=20ns)  
Low inductance package  
APPLICATIONS  
*
*
*
*
Laser LED drivers  
C
B
E
Fast edge generation  
High speed pulse generators  
Suitable for single, series and parallel operation  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
260  
Collector-Emitter Voltage  
100  
V
Emitter-Base Voltage  
6
500  
V
Continuous Collector Current  
Peak Collector Current (Pulse Width=20ns)  
Power Dissipation  
mA  
A
ICM  
60  
Ptot  
680  
mW  
°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +175  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
TYP.  
PARAMETER  
SYMBOL MIN.  
V(BR)CES 260  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=1mA  
Tamb= -55 to +175°C  
Collector-Emitter  
Breakdown Voltage  
VCEO(sus) 100  
IC=100µA  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
6
IE=10µA  
Collector Cut-Off  
Current  
0.1  
10  
V
V
CB=180V  
CB=180V, Tamb=100°C  
µA  
µA  
Emitter Cut-Off Current IEBO  
0.1  
0.5  
V
EB=4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
ISB  
V
IC=10mA, IB=1mA*  
Base-Emitter  
Saturation Voltage  
0.9  
V
IC=10mA, IB=1mA*  
Current in Second  
Breakdown (Pulsed)  
15  
25  
A
A
VC=200V, CCE=620pF  
VC=250V, CCE=620pF  
Static Forward Current hFE  
Transfer Ratio  
25  
IC=10mA, VCE=10V*  
Transition Frequency  
fT  
40  
MHz  
pF  
IC=10mA, VCE=20V  
f=20MHz  
Collector-Base  
Capacitance  
Ccb  
8
VCB=20V, IE=0  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-171  

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