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ZTX449K PDF预览

ZTX449K

更新时间: 2024-09-13 13:16:15
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美台 - DIODES 晶体小信号双极晶体管局域网
页数 文件大小 规格书
2页 61K
描述
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX449K 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:IN-LINE, R-PSIP-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.43
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

ZTX449K 数据手册

 浏览型号ZTX449K的Datasheet PDF文件第2页 
NPN SILICON PLANAR  
ZTX449  
MEDIUM POWER TRANSISTOR  
ISSUE 2 – MARCH 1994  
FEATURES  
*
*
*
30 Volt VCEO  
1 Amp continuous current  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tamb = 25°C  
Operating and Storage Temperature Range  
IC  
1
1
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
TYP.  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
30  
5
V
V
V
IC=100µA, IE=0  
IC=10mA, IB=0  
IE=100µA, IC=0  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.1  
10  
V
V
CB=40V  
CB=40V, Tamb=100°C  
µA  
µA  
Emitter Cut-Off Current IEBO  
0.1  
V
EB=4V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.5  
1
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
1.25  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn-on Voltage  
1
V
IC=1A,VCE=2V*  
Static Forward Current hFE  
Transfer Ratio  
70  
100  
80  
IC=50mA, VCE=2V*  
IC=500mA, VCE=2V*  
IC=1A, VCE=2V*  
300  
15  
40  
IC=2A, VCE=2V*  
Transition Frequency  
Output Capacitance  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V  
f=100MHz  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-173  

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