ZTX449

更新时间： 2024-10-30 12:47:27

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捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
2页	53K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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ZTX449 数据手册

NPN SILICON PLANAR

ZTX449

MEDIUM POWER TRANSISTOR

ISSUE 2 MARCH 1994

FEATURES

30 Volt V_CEO

1 Amp continuous current

P_tot= 1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb= 25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

TYP.

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA, I_E=0

IC=10mA, I_B=0

I_E=100µA, I_C=0

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

0.1

_CB=40V

_CB=40V, T_amb=100°C

µA

Emitter Cut-Off Current I_EBO

0.1

_EB=4V, I_C=0

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

0.5

I_C=1A, I_B=100mA*

I_C=2A, I_B=200mA*

Base-Emitter

Saturation Voltage

1.25

I_C=1A, I_B=100mA*

Base-Emitter

Turn-on Voltage

IC=1A,V_CE=2V*

Static Forward Current h_FE

Transfer Ratio

100

I_C=50mA, V_CE=2V*

I_C=500mA, V_CE=2V*

I_C=1A, V_CE=2V*

300

I_C=2A, V_CE=2V*

Transition Frequency

Output Capacitance

f_T

150

MHz

I_C=50mA, V_CE=10V

f=100MHz

C_obo

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3-173

中文翻译

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