YJL2302A
Electrical Characteristics (T =25℃ unless otherwise noted)
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Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
VGS=0V, ID= 250μA
VDS= 20V,VGS=0V
VGS=±10V, VDS=0V
VDS= VGS, ID= 250μA
VGS= 4.5V, ID= 4.3A
VGS= 2.5V, ID= 3.0A
IS= 4.3A,VGS=0V
20
V
IDSS
1
±100
1.25
27
μA
nA
V
IGSS
VGS(th)
0.55
0.85
21
Static Drain-Source On-Resistance
RDS(ON)
mΩ
V
28
37
Diode Forward Voltage
Dynamic Parameters
Input Capacitance
VSD
0.8
1.2
Ciss
Coss
Crss
602
79
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
VDS=20V,VGS=0V,f=1MHZ
pF
nC
ns
62
Qg
Qgs
Qgd
Qrr
trr
6.5
1.6
1.5
0.6
9.9
8
Gate-Source Charge
Gate-Drain Charge
VGS= 4.5V,VDS= 10V,ID= 4.3A
Reverse Recovery Chrage
Reverse Recovery Time
Turn-on Delay Time
Turn-on Rise Time
IF= 15A, di/dt=100A/us
tD(on)
tr
58
20
68
VGS= 4.5V, VDS= 10V, ID= 6.7A
RGEN= 3Ω
Turn-off Delay Time
Turn-off fall Time
tD(off)
tf
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
R
B.
θJA is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder
R
R
mounting surface of the drain pins. θJL is guaranteed by design, while θJA is determined by the board design. The maximum rating presented here
is based on mounting on a 1 in 2 pad of 2oz copper.
2 / 7
S-E667
Rev.3.0,11-Nov-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com