Datasheet > YJL3099AJ

YJL3099AJ

更新时间： 2024-09-21 15:19:35

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	694K
描述
SOT-23

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中文翻译

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数据手册

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YJL3099AJ 数据手册

RoHS

COMPLIANT

YJL3099AJ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

30V

● I_D

1.1A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● R_DS(ON)( at V_GS=2.5V)

＜450mΩ

＜550mΩ

＜850mΩ

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±12

1.1

T_A=25℃

Drain Current

I_D

0.7

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^B

I_DM

3.3

0.83

T_A=25℃

P_D

℃

0.33

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

■Thermal resistance

Parameter

Symbol

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^C

Steady-State

R_θJA

120

150

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJL3099AJ

3099.

3000

30000

120000

7“ reel

1 / 8

S-E286

Rev.1.0,09-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

中文翻译

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