Datasheet > YJL3134KBW

YJL3134KBW

更新时间： 2024-11-22 15:19:23

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	552K
描述
SOT-323

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中文翻译

获取价格

数据手册

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YJL3134KBW 数据手册

RoHS

COMPLIANT

YJL3134KBW

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

20 V

● I_D

0.5 A

● R_DS(ON)( at V_GS=4.5V)

● R_DS(ON)( at V_GS=2.5V)

● R_DS(ON)( at V_GS=1.8V)

＜300 mohm

＜400 mohm

＜700 mohm

● ESD Protected Up to 2.0KV (HBM)

General Description

● Trench Power LV MOSFET technology

● High Power and current handing capability

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● PWM application

● Load switch

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±12

0.5

T_A=25℃ @ Steady State

T_A=70℃ @ Steady State

Drain Current

I_D

0.4

Pulsed Drain Current ^A

I_DM

3.3

Total Power Dissipation @ T_A=25℃

P_D

0.15

Thermal Resistance Junction-to-Ambient @ Steady State

Junction and Storage Temperature Range

R_θJA

833

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJL3134KBW

34KB.

3000

30000

120000

7“ reel

1 / 6

S-E161

Rev.1.1, 24-Jun-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

中文翻译

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