Datasheet > YJL3139KA

YJL3139KA

更新时间： 2024-11-22 17:02:03

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	402K
描述
SOT-23

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中文翻译

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数据手册

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YJL3139KA 数据手册

RoHS

COMPLIANT

YJL3139KA

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-0.5A

● R_DS(ON)( at V_GS=-4.5V)

● R_DS(ON)( at V_GS=-2.5V)

● R_DS(ON)( at V_GS=-1.8V)

＜850 mohm

＜1200 mohm

＜2000 mohm

● ESD Protected Up to 2.0KV (HBM)

General Description

● Trench Power LV MOSFET technology

● High Density Cell Design for Low R_DS(ON)

● High Speed switching

Applications

● Interfacing, Logic switch

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Maximum

-20

Unit

Drain-source Voltage

Gate-source Voltage

Drain Current

V_DS

V_GS

±12

T_A=25℃ Steady State

T_A=70℃ Steady State

-0.5

-0.4

I_D

Pulsed Drain Current ^A

I_DM

-2.6

0.35

Total Power Dissipation @ T_A=25℃ Steady State

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

P_D

R_θJA

357

℃/W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJL3139KA

39KA.

3000

30000

120000

7“ reel

1 / 6

S-E170

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,23-Oct-21

12 3 4 5 6

中文翻译

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