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YJL2304B PDF预览

YJL2304B

更新时间: 2024-04-09 18:58:51
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扬杰 - YANGJIE /
页数 文件大小 规格书
8页 722K
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SOT-23

YJL2304B 数据手册

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RECOMMEND  
YJL2304A  
FOR NEW DESIGN  
RoHS  
COMPLIANT  
YJL2304B  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
30V  
ID  
4A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
36mΩ  
60mΩ  
General Description  
Trench Power MV MOSFET technology  
High Power and current handing capability  
● Moisture Sensitivity Level 1  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
PWM application  
Load switch  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
30  
VGS  
±20  
V
4
TA=25  
Drain Current  
ID  
A
A
2.5  
TA=100℃  
Pulsed Drain Current A  
Total Power Dissipation B  
IDM  
20  
1
TA=25
PD  
W
0.4  
TA=100℃  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+150  
Thermal resistance  
Parameter  
Symbol  
Typ  
Max  
Units  
Thermal Resistance Junction-to-Ambient C  
Steady-State  
RθJA  
100  
125  
/W  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
Marking  
CODE  
YJL2304B  
F2  
2304B.  
3000  
30000  
120000  
7“ reel  
1 / 8  
S-E196  
Rev.1.2,27-Feb-24  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com