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YJL3139KADW PDF预览

YJL3139KADW

更新时间: 2024-11-22 17:01:11
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
6页 406K
描述
SOT-363

YJL3139KADW 数据手册

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RoHS  
COMPLIANT  
YJL3139KADW  
P-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
-20V  
● ID  
-0.5A  
● RDS(ON)( at VGS=-4.5V)  
● RDS(ON)( at VGS=-2.5V)  
● RDS(ON)( at VGS=-1.8V)  
850 mohm  
1200 mohm  
2000 mohm  
● ESD Protected Up to 2.0KV (HBM)  
General Description  
● Trench Power LV MOSFET technology  
● High Density Cell Design for Low RDS(ON)  
● High Speed switching  
Applications  
● Interfacing, Logic switch  
● Load switch  
● Power management  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Maximum  
-20  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
Drain Current  
VDS  
VGS  
±12  
V
TA=25Steady State  
TA=70Steady State  
-0.5  
-0.4  
ID  
A
Pulsed Drain Current A  
IDM  
-2.6  
0.15  
A
Total Power Dissipation @ TA=25Steady State  
Thermal Resistance Junction-to-Ambient @ Steady State B  
Junction and Storage Temperature Range  
PD  
W
RθJA  
833  
/W  
TJ ,TSTG  
-55+150  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
YJL3139KADW  
F2  
39KA  
3000  
30000  
120000  
7“ reel  
1 / 6  
S-E172  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.1.0,23-Oct-21