Datasheet > YJL2305BQ

YJL2305BQ

更新时间： 2024-04-09 18:59:28

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	325K
描述
SOT-23

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YJL2305BQ 数据手册

RoHS

COMPLIANT

YJL2305BQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-5.4A

● R_DS(ON)( at V_GS=-4.5V)

＜39mohm

● R_DS(ON)( at V_GS=-2.5V)

● R_DS(ON)( at V_GS=-1.8V)

＜49mohm

＜63mohm

General Description

● Trench Power LV MOSFET technology

● High Power and Current handing capability

● Low Gate Charge

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Battery protection

● Power management

● Load switch

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

-20

Unit

Drain-source Voltage

V_DS

Gate-source Voltage

Drain Current

V_GS

±10

-5.4

T_A=25℃

I_D

-4.4

T_A=70℃

Pulsed Drain Current ^A

Total Power Dissipation

I_DM

-22

1.2

T_A=25℃

T_A=70℃

P_D

0.8

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

104

℃/ W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJL2305BQ

S5_Bꞏ

3000

30000

120000

7“ reel

1 / 6

S-S3547

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.4,22-Dec-22

12 3 4 5 6

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