Datasheet > YJ7N70CH

YJ7N70CH

更新时间： 2022-06-24 15:41:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
11页	1227K
描述
N-Channel Enhancement Mode Mosfet

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YJ7N70CH 数据手册

RoHS

COMPLIANT

YJ7N70

(T =25℃ Unless otherwise specified

■

Maximum Ratings

)

Parameter

Symbol

Value

700

Unit

Drain-Source Voltage

V_DSS

Tc=25℃

Continues Drain Current

I_D

Tc=100℃

3.6*

Plused Drain Current (note 1)

Gate-to-Source Voltage

I_DM

V_GS

E_AS

I_AR

±30

210

7.0

Single Pulsed Avalanche Energy (note 2)

Avalanche Current (note 1)

Repetitive Avalanche Energy (note 1)

Peak Diode Recovery (note 3)

E_AR

dv/dt

V/ns

4.5

TO-220AB/TO-251/

TO-263

100

P_D

Power Dissipation

Tc=25℃

ITO-220AB

TO-220AB/TO-251/

TO-263

0.8

P_D(DF)

Power Dissipation Derating Factor

W/℃

Above 25℃

ITO-220AB

0.26

150，-55～+150

300

Operating and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_STG

T_L

℃

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

Off-Characteristics

Parameter

Symbol

BV_DSS

Tests Conditions

I_D=250μA, V_GS=0V

Min

Type

Max

Unit

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

700

△BV_DSS/△T_J

I_D=250μA, referenced to 25℃

V_DS=700V,V_GS=0V, T_C=25℃

V_DS=560V, T_C=125℃

0.7

V/℃

Zero Gate Voltage Drain Current

I_DSS

μA

100

-100

Gate-body leakage current, forward

Gate-body leakage current, reverse

I_GSSF

I_GSSR

V_DS=0V, V_GS=30V

V_DS=0V, V_GS= -30V

2 / 11

S-D060

Rev.1.1,11-Mar-19

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

123 4 5 6 7...11

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