Datasheet > YJA3139KB

YJA3139KB

更新时间： 2024-09-14 15:19:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	868K
描述
DFN1006-3L

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中文翻译

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数据手册

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YJA3139KB 数据手册

RoHS

COMPLIANT

YJA3139KB

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-20V

● I_D

-0.65A

● R_DS(ON)( at V_GS=-4.5V)

● R_DS(ON)( at V_GS=-2.5V)

● R_DS(ON)( at V_GS=-1.8V)

＜850 mohm

＜1200 mohm

＜2000 mohm

● ESD Protected Up to 2.0KV (HBM)

General Description

● Trench Power LV MOSFET technology

● High Density Cell Design for Low R_DS(ON)

● High Speed switching

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Interfacing, Logic switch

● Load switch

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Maximum

-20

Unit

Drain-source Voltage

Gate-source Voltage

Drain Current

V_DS

V_GS

±12

T_A=25℃ Steady State

T_A=70℃ Steady State

-0.65

-0.52

I_D

Pulsed Drain Current ^A

I_DM

-2.0

0.9

Total Power Dissipation @ T_A=25℃ Steady State

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

P_D

R_θJA

138

℃/W

℃

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJA3139KB

10000

100000

400000

7“ reel

1 / 6

S-E284

Rev.1.0,07-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

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