Datasheet > XPH6R30ANB

XPH6R30ANB

更新时间： 2024-11-06 14:56:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	538K
描述
N-ch MOSFET, 100 V, 45 A, 0.0063 Ω@10V, SOP Advance(WF)

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XPH6R30ANB 数据手册

XPH6R30ANB

MOSFETs Silicon N-channel MOS (U-MOS-H)

XPH6R30ANB

1. Applications

•

Automotive

Motor Drivers

Switching Voltage Regulators

2. Features

(1) AEC-Q101 qualified

(2) Small, thin package

(3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(WF)

Start of commercial production

2019-11

2020-06-24

Rev.5.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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