Datasheet > XPJR6604PB

XPJR6604PB

更新时间： 2024-11-06 14:58:07

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XPJR6604PB 数据手册

XPJR6604PB

MOSFETs Silicon N-channel MOS (U-MOS�-H)

XPJR6604PB

1. Applications

•

Automotive

Switching Voltage Regulators

Motor Drivers

DC-DC Converters

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 0.53 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit Pin Assignment (Note)

5: Gate

6: Drain

1 to 4: Source (heatsink)

S-TOGLTM

Note: S-TOGLTM is a trademark of Toshiba Electronic Devices & Storage Corporation.

Start of commercial production

2023-05

Toshiba Electronic Devices & Storage Corporation

2023-06-12

Rev.1.0

12 3 4 5 6 7...10

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