Datasheet > XPH8R316MC

XPH8R316MC

更新时间： 2024-11-06 14:57:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	647K
描述
P-ch MOSFET, -60 V, -90 A, 0.0083 Ω@10V, SOP Advance(WF)

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XPH8R316MC 数据手册

XPH8R316MC

MOSFETs Silicon P-Channel MOS (U-MOS�)

XPH8R316MC

1. Applications

•

Automotive

Switching Voltage Regulators

DC-DC Converters

Motor Drivers

2. Features

(1) AEC-Q101 qualified

(2) Small, thin package

(3) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = -10 V)

(4) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

(5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(WF)

Start of commercial production

2023-05

2023-04-13

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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