Datasheet > X2N5457

X2N5457

更新时间： 2024-09-15 23:29:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
1页	19K
描述
TRANSISTOR \| JFET \| N-CHANNEL \| 5MA I(DSS) \| CHIP

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中文翻译

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数据手册

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X2N5457 数据手册

N-Channel JFET

General Purpose Amplifier/Switch

CORPORATION

2N5457 – 2N5459

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise noted)

PIN CONFIGURATION

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Continuous Forward Gate Current . . . . . . . . . . . . . . . . 10mA

Storage Temperature Range . . . . . . . . . . . . . -65^oC to +150^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +135^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . 2.82mW/^oC

TO-92

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

5010

Part

Package

Temperature Range

2N5457-59 Plastic TO-92

X2N5457-59 Sorted Chips in Carriers

-55^oC to +135^oC

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

I_G= -10µA, V_DS= 0

BV_GSS

Gate-Source Breakdown Voltage

-25

-1.0

-200

-6.0

-7.0

-8.0

_GS= -15V, V_DS= 0

_GS= -15V, V_DS= 0, T_A= 100^oC

I_GSS

Gate Reverse Current

2N5457

2N5458

2N5459

2N5457

2N5458

2N5459

2N5457

2N5458

2N5459

2N5457

2N5458

2N5459

-0.5

-1.0

-2.0

2.5

V_DS= 15V, I_D= 10nA

V_GS(off)

Gate-Source Cutoff Voltage

V_DS= 15V, I_D= 100µA, Typical

V_GS

Gate-Source Voltage

3.5

V_DS= 15V, I_D= 200µA, Typical

V_DS= 15V, I_D= 400µA, Typical

V_DS= 15V, V_GS= 0

4.5

1.0

5.0

9.0

Zero-Gate-Voltage Drain Current

(Note 1)

I_DSS

µS

2.0

4.0

1000

1500

2000

5000

5500

6000

V_DS= 15V, V_GS= 0 , f = 1kHz

| y_fs

Forward Transfer Admittance

| y_os

C_iss

C_rss

Output Admittance

µS

V_DS= 15V, V_GS= 0, f = 1kHz

V_DS= 15V, V_GS= 0, f = 1MHz

Input Capacitance (Note 2)

7.0

Reverse Transfer Capacitance (Note 2)

Noise Figure (Note 2)

3.0

V_DS= 15V, V_GS= 0, R_G= 1MHz, BW = 1Hz, f = 1kHz

NOTES: 1. Pulse test required. PW ≤630ms, duty cycle ≤10%.

2. For design reference only, not 100% tested.

中文翻译

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与X2N5457相关器件

型号	品牌	获取价格	描述	数据表
X2N5457-59	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier/Switch
X2N5458	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 9MA I(DSS) \| CHIP
X2N5459	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 16MA I(DSS) \| CHIP
X2N5460	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
X2N5461	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
X2N5462	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
X2N5463	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
X2N5464	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
X2N5465	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET
X2N5484	CALOGIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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