Datasheet > X2N5911

X2N5911

更新时间： 2024-09-15 23:29:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	24K
描述
TRANSISTOR \| JFET \| N-CHANNEL \| DUAL \| 25V V(BR)DSS \| 40MA I(DSS) \| CHIP

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中文翻译

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数据手册

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X2N5911 数据手册

Dual N-Channel JFET

High Frequency Amplifier

CORPORATION

2N5911 / 2N5912

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise specified)

Tight Tracking

Low Insertion Loss

Good Matching

•

Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature Range . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +150^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

•

PIN CONFIGURATION

One Side

367mW

Both Sides

500mW

Power Dissipation

Derate above 25^oC

3.0mW/^oC

4.0mW/^oC

TO-99

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part

2N5911-12 Hermetic TO-99

X2N5912 Sorted Chips in Carriers

Package

Temperature Range

-55^oC to +150^oC

CJ1

-55^oC to +150^oC

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

SYMBOL

PARAMETER

MIN

MAX

-100

-250

UNITS

TEST CONDITIONS

_GS= -15V, V_DS= 0

I_GSS

Gate Reverse Current

T_A= 150^oC

BV_GSS

V_GS(off)

V_GS

Gate Reverse Breakdown Voltage

Gate-Source Cutoff Voltage

Gate-Source Voltage

I_G= -1µA, V_DS= 0

-25

-1

-5

-4

V_DS= 10V, I_D= 1nA

-0.3

V_DG= 10V, I_D= 5mA

V_DS= 10V, V_GS= 0V

-100

I_G

Gate Operating Current

T_A= 150^oC

I_DSS

g_fs

Saturation Drain Current (Pulsewidth 300µs, duty cycle ≤3%)

Common-Source Forward Transconductance

5000

10,000

100

150

f = 1kHz

g_fs

Common-Source Forward Transconductance (Note 1)

Common-Source Output Conductance

f = 100MHz

f = 1kHz

µS

g_os

g_oss

C_iss

C_rss

Common-Source Output Conductance (Note 1)

Common-Source Input Capacitance (Note 1)

f = 100MHz

V_DG= 10V, I_D= 5mA

f = 1MHz

Common-Source Reverse Transfer Capacitance (Note 1)

1.2

√Hz

e_n

Equivalent Short Circuit Input Noise Voltage (Note 1)

Spot Noise Figure (Note 1)

f = 10kHz

_G= 100kΩ

中文翻译

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