Datasheet > X2N5114

X2N5114

更新时间： 2024-11-05 23:29:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
2页	30K
描述
TRANSISTOR \| JFET \| P-CHANNEL \| 90MA I(DSS) \| CHIP

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数据手册

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X2N5114 数据手册

P-Channel JFET Switch

CORPORATION

2N5114 – 2N5116

GENERAL DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise noted)

Ideal for inverting switching or "Virtual Gnd" switching into

inverting input of Op. Amp. No driver is required and ±10VAC

signals can be handled using only +5V logic (TTL or CMOS).

Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature Range . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +200^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/^oC

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

FEATURES

Low ON Resistance

I_D(off)<500pA

Switches directly from TTL Logic

•

PIN CONFIGURATION

ORDERING INFORMATION

Part

Package

Temperature Range

TO-18

2N5114-16 Hermetic TO-18

X2N5114-16 Sorted Chips in Carriers

-55^oC to +200^oC

G,C

5508

SWITCHING CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

2N5114

2N5115

MAX

2N5116

MAX

SYMBOL

PARAMETER

Turn-ON Delay Time

UNITS

MAX

t_d

t_r

Rise Time (Note 2)

t_off

t_f

Turn-OFF Delay Time (Note 2)

Fall Time (Note 2)

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

2N5114

2N5115

2N5116

SYMBOL

PARAMETER

UNITS

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

BV_GSS

Gate-Source Breakdown Voltage

I_G= 1µA, V_DS= 0

500

1.0

500

1.0

500

1.0

µA

_GS= 20V, V_DS= 0

I_GSS

Gate Reverse Current

T_A150^oC

-500

_DS= -15V

_GS= 12V (2N5114)

_GS= 7V (2N5115)

_GS= 5V (2N5116)

I_D(off)

Drain Cutoff Current

-1.0

µA

V_P

Gate-Source Pinch-Off Voltage

V_DS= -15V, I_D= -1nA

中文翻译

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