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X22C10PMB PDF预览

X22C10PMB

更新时间: 2024-01-19 22:58:27
品牌 Logo 应用领域
XICOR /
页数 文件大小 规格书
12页 62K
描述
Nonvolatile Static RAM

X22C10PMB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:0.150 INCH, PLASTIC, SOIC-16Reach Compliance Code:unknown
风险等级:5.82Is Samacsys:N
最长访问时间:120 ns其他特性:EEPROM SOFTWARE STORE/RECALL; RETENTION/ENDURANCE - 100 YEARS/100000 CYCLES
JESD-30 代码:R-PDSO-G16JESD-609代码:e0
长度:9.905 mm内存密度:256 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:4
功能数量:1端口数量:1
端子数量:16字数:64 words
字数代码:64工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:64X4输出特性:3-STATE
可输出:NO封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:SRAMs
最大压摆率:0.1 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

X22C10PMB 数据手册

 浏览型号X22C10PMB的Datasheet PDF文件第2页浏览型号X22C10PMB的Datasheet PDF文件第3页浏览型号X22C10PMB的Datasheet PDF文件第4页浏览型号X22C10PMB的Datasheet PDF文件第5页浏览型号X22C10PMB的Datasheet PDF文件第6页浏览型号X22C10PMB的Datasheet PDF文件第7页 
256 Bit  
X22C10  
64 x 4  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
High Performance CMOS  
The X22C10 is a 64 x 4 CMOS NOVRAM featuring a  
high-speed static RAM overlaid bit-for-bit with a non-  
volatile E2PROM. The NOVRAM design allows data to  
be easily transferred from RAM to E2PROM (STORE)  
and from E2PROM to RAM (RECALL). The STORE  
operation is completed within 5ms or less and the  
RECALL is completed within 1µs.  
—120ns RAM Access Time  
High Reliability  
—Store Cycles: 1,000,000  
—Data Retention: 100 Years  
Low Power Consumption  
—Active: 40mA Max.  
—Standby: 100µA Max.  
XicorNOVRAMsaredesignedforunlimitedwriteopera-  
tions to the RAM, either RECALLs from E2PROM or  
writes from the host. The X22C10 will reliably endure  
1,000,000 STORE cycles. Inherent data retention is  
greater than 100 years.  
Infinite Array Recall, RAM Read and Write Cycles  
Nonvolatile Store Inhibit: VCC = 3.5V Typical  
Fully TTL and CMOS Compatible  
JEDEC Standard 18-Pin 300-mil DIP  
100% Compatible with X2210  
—With Timing Enhancements  
FUNCTIONAL DIAGRAM  
PIN CONFIGURATION  
PLASTIC DIP  
CERDIP  
2
NONVOLATILE E PROM  
MEMORY ARRAY  
NC  
1
2
3
4
5
6
7
8
9
18  
17  
16  
15  
14  
13  
12  
11  
10  
V
CC  
A
4
A
3
A
2
A
1
NC  
STORE  
A
5
I/O  
A
0
ARRAY  
RECALL  
4
ROW  
SELECT  
STATIC RAM  
MEMORY ARRAY  
A
A
X22C10  
1
2
I/O  
I/O  
I/0  
3
2
A
0
CS  
1
V
V
WE  
CC  
SS  
STORE  
RECALL  
CONTROL  
LOGIC  
V
STORE  
RECALL  
SS  
COLUMN  
I/O CIRCUITS  
3815 FHD F02  
I/O  
1
COLUMN SELECT  
INPUT  
DATA  
I/O  
2
SOIC  
CONTROL  
I/O  
3
A
4
A
3
A
2
A
1
A
0
CS  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
V
CC  
A
A
A
3
4
5
I/O  
4
A
5
I/O  
4
I/O  
3
I/O  
2
I/O  
1
WE  
X22C10  
CS  
V
SS  
STORE  
WE  
RECALL  
3815 FHD F01  
3815 FHD F08.1  
© Xicor, Inc. 1991,1995 Patents Pending  
3815-2.4 7/26/96 T0/CO/D3 SH  
Characteristics subject to change without notice  
1

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