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X22C10ST4 PDF预览

X22C10ST4

更新时间: 2024-02-27 21:50:30
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器光电二极管内存集成电路
页数 文件大小 规格书
12页 464K
描述
Non-Volatile SRAM, 64X4, 120ns, CMOS, PDSO16, 0.150 INCH, PLASTIC, SOIC-16

X22C10ST4 技术参数

生命周期:Obsolete包装说明:0.150 INCH, PLASTIC, SOIC-16
Reach Compliance Code:unknown风险等级:5.82
最长访问时间:120 ns其他特性:EEPROM SOFTWARE STORE/RECALL; RETENTION/ENDURANCE - 100 YEARS/100000 CYCLES
JESD-30 代码:R-PDSO-G16长度:9.905 mm
内存密度:256 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:4功能数量:1
端口数量:1端子数量:16
字数:64 words字数代码:64
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64X4
输出特性:3-STATE可输出:NO
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

X22C10ST4 数据手册

 浏览型号X22C10ST4的Datasheet PDF文件第2页浏览型号X22C10ST4的Datasheet PDF文件第3页浏览型号X22C10ST4的Datasheet PDF文件第4页浏览型号X22C10ST4的Datasheet PDF文件第5页浏览型号X22C10ST4的Datasheet PDF文件第6页浏览型号X22C10ST4的Datasheet PDF文件第7页 
256 Bit  
64 x 4  
X22C10  
Nonvolatile Static RAM  
DESCRIPTION  
FEATURES  
• High Performance CMOS  
—120ns RAM Access Time  
• High Reliability  
—Store Cycles: 1,000,000  
—Data Retention: 100Years  
• Low Power Consumption  
—Active: 40mA Max.  
The X22C10 is a 64 x 4 CMOS NOVRAM featuring a  
high-speed static RAM overlaid bit-for-bit with a non-  
volatile E2PROM. The NOVRAM design allows data to  
be easily transferred from RAM to E2PROM (STORE)  
and from E2PROM to RAM (RECALL). The STORE  
operation is completed within 5ms or less and the  
RECALL is completed within 1µs.  
—Standby: 100µA Max.  
• Infinite Array Recall, RAM Read and Write Cycles  
• Nonvolatile Store Inhibit:V  
• Fully TTL and CMOS Compatible  
• JEDEC Standard 18-Pin 300-mil DIP  
• 100% Compatible with X2210  
—With Timing Enhancements  
Xicor NOVRAMs are designed for unlimited write oper-  
ations to the RAM, either RECALLs from E2PROM or  
writes from the host. The X22C10 will reliably endure  
1,000,000 STORE cycles. Inherent data retention is  
greater than 100 years.  
= 3.5V Typical  
CC  
FUNCTIONAL DIAGRAM  
PIN CONFIGURATION  
PLASTIC DIP  
CERDIP  
NONVOLATILE E2PROM  
MEMORY ARRAY  
NC  
1
2
3
4
5
6
7
8
9
18  
17  
16  
15  
14  
13  
12  
11  
10  
V
CC  
STORE  
A
NC  
A
A
A
4
0
1
2
ARRAY  
RECALL  
A
A
5
ROW  
SELECT  
STATIC RAM  
MEMORY ARRAY  
3
I/O  
A
4
2
X22C10  
I/O  
I/O  
A
3
2
1
A
0
VCC  
VSS  
I/0  
1
STORE  
RECALL  
CS  
CONTROL  
LOGIC  
V
WE  
SS  
COLUMN  
I/O CIRCUITS  
STORE  
RECALL  
I/O  
I/O  
I/O  
I/O  
1
2
3
4
COLUMN SELECT  
INPUT  
DATA  
CONTROL  
SOIC  
A
4
1
2
3
4
5
6
7
16  
15  
14  
13  
V
CC  
A
A
A
5
3
4
A
3
A
5
I/O  
I/O  
I/O  
I/0  
A
2
4
3
2
A
1
CS  
X22C10 12  
A
0
11  
10  
CS  
1
WE  
V
WE  
SS  
STORE  
RECALL  
8
9
Characteristics subject to change without notice. 1 of 12  
REV 1.0 1/30/01  
www.xicor.com  

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