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X20C17PI-35 PDF预览

X20C17PI-35

更新时间: 2024-11-12 22:23:11
品牌 Logo 应用领域
XICOR 存储
页数 文件大小 规格书
11页 49K
描述
High Speed AUTOSTORE⑩ NOVRAM

X20C17PI-35 数据手册

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APPLICATION NOTE  
A V A I L A B L E  
AN56  
16K  
X20C17  
2K x 8 Bit  
High Speed AUTOSTORE™ NOVRAM  
FEATURES  
DESCRIPTION  
24-Pin Standard SRAM DIP Pinout  
Fast Access Time: 35ns, 45ns, 55ns  
High Reliability  
TheXicorX20C17isa2Kx8NOVRAMfeaturingahigh-  
speed static RAM overlaid bit-for-bit with a nonvolatile  
electrically erasable PROM (E2PROM) and the  
AUTOSTORE feature which automatically saves the  
RAMcontentstoE2PROMatpower-down. TheX20C17  
isfabricatedwithadvancedCMOSfloatinggatetechnol-  
ogy to achieve high speed with low power and wide  
power-supply margin. The X20C17 features a compat-  
ible JEDEC approved byte-wide memory pinout for  
industry standard SRAMs.  
Endurance: 1,000,000 Nonvolatile Store  
Operations  
Retention: 100 Years Minimum  
AUTOSTORE™ NOVRAM  
Automatically Stores SRAM Data Into the  
E2PROM Array When VCC Low Threshold is  
Detected  
E2PROM Data Automatically Recalled Into  
RAM Upon Power-up  
The NOVRAM design allows data to be easily trans-  
ferred from RAM to E2PROM (store) and E2PROM to  
RAM (recall). The store operation is completed in 2.5ms  
or less. An automatic array recall operation reloads the  
contents of the E2PROM into RAM upon power-up.  
Low Power CMOS  
Standby: 250µA  
Infinite E2PROM Array Recall, and RAM Read  
and Write Cycles  
Xicor NOVRAMS are designed for unlimited write  
operations to RAM, either from the host or recalls from  
E2PROM, andaminimum1,000,000storeoperationsto  
the E2PROM. Data retention is specified to be greater  
than 100 years.  
PIN CONFIGURATION  
PLASTIC  
A
A
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
V
A
A
7
6
5
4
3
2
1
0
0
1
2
CC  
8
2
A
3
9
A
4
WE  
OE  
A
5
6
A
A
10  
X20C17  
7
A
CE  
8
A
I/O  
7
I/O  
6
I/O  
5
I/O  
4
9
I/O  
I/O  
I/O  
V
10  
11  
12  
I/O  
3
SS  
2015 ILL F02.1  
AUTOSTORE™ NOVRAM is a trademark of Xicor, Inc.  
©Xicor, Inc. 1992, 1995 Patents Pending  
2015-2.5 8/1/97 T1/C0/D0 SH  
Characteristics subject to change without notice  
1

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