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X20C17PM-45 PDF预览

X20C17PM-45

更新时间: 2024-09-24 22:23:11
品牌 Logo 应用领域
XICOR 存储
页数 文件大小 规格书
11页 49K
描述
High Speed AUTOSTORE⑩ NOVRAM

X20C17PM-45 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, DIP-24Reach Compliance Code:unknown
风险等级:5.92最长访问时间:45 ns
其他特性:RETENTION/ENDURANCE=100 YEARS/100000 CYCLESJESD-30 代码:R-PDIP-T24
JESD-609代码:e0长度:31.685 mm
内存密度:16384 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:24
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:2KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP24,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:4.87 mm
最大待机电流:0.00025 A子类别:SRAMs
最大压摆率:0.1 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

X20C17PM-45 数据手册

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APPLICATION NOTE  
A V A I L A B L E  
AN56  
16K  
X20C17  
2K x 8 Bit  
High Speed AUTOSTORE™ NOVRAM  
FEATURES  
DESCRIPTION  
24-Pin Standard SRAM DIP Pinout  
Fast Access Time: 35ns, 45ns, 55ns  
High Reliability  
TheXicorX20C17isa2Kx8NOVRAMfeaturingahigh-  
speed static RAM overlaid bit-for-bit with a nonvolatile  
electrically erasable PROM (E2PROM) and the  
AUTOSTORE feature which automatically saves the  
RAMcontentstoE2PROMatpower-down. TheX20C17  
isfabricatedwithadvancedCMOSfloatinggatetechnol-  
ogy to achieve high speed with low power and wide  
power-supply margin. The X20C17 features a compat-  
ible JEDEC approved byte-wide memory pinout for  
industry standard SRAMs.  
Endurance: 1,000,000 Nonvolatile Store  
Operations  
Retention: 100 Years Minimum  
AUTOSTORE™ NOVRAM  
Automatically Stores SRAM Data Into the  
E2PROM Array When VCC Low Threshold is  
Detected  
E2PROM Data Automatically Recalled Into  
RAM Upon Power-up  
The NOVRAM design allows data to be easily trans-  
ferred from RAM to E2PROM (store) and E2PROM to  
RAM (recall). The store operation is completed in 2.5ms  
or less. An automatic array recall operation reloads the  
contents of the E2PROM into RAM upon power-up.  
Low Power CMOS  
Standby: 250µA  
Infinite E2PROM Array Recall, and RAM Read  
and Write Cycles  
Xicor NOVRAMS are designed for unlimited write  
operations to RAM, either from the host or recalls from  
E2PROM, andaminimum1,000,000storeoperationsto  
the E2PROM. Data retention is specified to be greater  
than 100 years.  
PIN CONFIGURATION  
PLASTIC  
A
A
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
V
A
A
7
6
5
4
3
2
1
0
0
1
2
CC  
8
2
A
3
9
A
4
WE  
OE  
A
5
6
A
A
10  
X20C17  
7
A
CE  
8
A
I/O  
7
I/O  
6
I/O  
5
I/O  
4
9
I/O  
I/O  
I/O  
V
10  
11  
12  
I/O  
3
SS  
2015 ILL F02.1  
AUTOSTORE™ NOVRAM is a trademark of Xicor, Inc.  
©Xicor, Inc. 1992, 1995 Patents Pending  
2015-2.5 8/1/97 T1/C0/D0 SH  
Characteristics subject to change without notice  
1

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