WNS20S100CB
Dual power Schottky diode
5 December 2017
Product data sheet
1. General description
Dual common cathode power Schottky diode designed for high frequency switched mode power
supplies in a TO-263 (D2PAK) plastic package.
2. Features and benefits
•
Trench structure
•
•
•
High junction temperature up to 150°C
Low forward conduction voltage
Neligible switching losses
3. Applications
•
•
•
•
DC to DC converters
Freewheeling diode
OR-ing diode
Switched mode power supply rectifier
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRRM
repetitive peak reverse
voltage
-
-
100
V
IF(AV)
IO(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 117 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3
-
-
-
-
10
20
A
A
average output current δ = 0.5 ; Tmb ≤ 116°C; square-wave
pulse; both diodes conducting
Static characteristics
VF forward voltage
IF = 3 A; Tj = 25 °C; Fig. 6; per diode
IF = 3 A; Tj = 125 °C; Fig. 6; per diode
IF = 10 A; Tj = 25 °C; Fig. 6; per diode
IF = 10 A; Tj = 125 °C; Fig. 6; per diode
-
-
-
-
-
0.56
0.53
0.89
0.73
-
0.61
0.58
0.95
0.8
V
V
V
V
IR
reverse current
VR = 100 V; Tj = 25 °C; Fig. 7; Fig. 8;
per diode
50
µA
VR = 100 V; Tj = 125 °C; Fig. 7; Fig. 8;
per diode
-
-
10
mA