Datasheet > WNMD2188

WNMD2188

更新时间： 2024-04-09 18:58:50

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
10页	958K
描述
MOSFET

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数据手册

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WNMD2188 数据手册

WNMD2188

Test Circuit

FET1 and the FET2 are both measured. Test circuits are example of measuring the FET1 side

Test Circuit 2

Test Circuit 1

Vsss/Isss

IGSS

Vss

When FET1 is measured,

Gate and Source of FET2

are short-circuited.

VGS

Test Circuit 3

VGS(th)

Test Circuit 4

R_ss(on)

When FET1 is

measured,Gate and

Source of FET2

are short-circuited.

Vss

VGS

Test Circuit 6

Test Circuit 5

t_d(on),t_r,t_d(off),t_f

When FET1 is

measured,Gate

and Source of

FET2 are short-

circuited.

VsS

Test Circuit 7

V_F(S-S)

VGS=0V

When FET1 is measured,

+4.5V is added to V_GS

of FET2.

Will Semiconductor Ltd.

2021/12/03-Rev.1.0

1 2 345 6 7...10

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