Datasheet > WCMA2016U4X-FF70

WCMA2016U4X-FF70

更新时间： 2022-11-24 21:42:45

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	289K
描述
128K x 16 STATIC RAM

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WCMA2016U4X-FF70 数据手册

WCMA2016U4X

Electrical CharacteristicsOver the Operating Range

WCMA2016U4X

Param-

eter

Description

Test Conditions

Min.

Typ.^[4]

Max.

Unit

V_OH

Output HIGH Voltage I_OH= –1.0 mA

Output LOW Voltage I_OL= 2.1mA

Input HIGH Voltage

V_CC= 2.7V

2.4

V_OL

V_IH

V_IL

I_IX

0.4

V_CC+ 0.5V

0.8

2.2

–0.3

–1

Input LOW Voltage

Input Leakage Cur-

rent

GND < V_I< V_CC

µA

I_OZ

Output Leakage Cur- GND < V_O< V_CC, Output Disabled

rent

–1

µA

f = f_MAX= 1/t_RC

f = 1 MHz

V_CC= 3.6V

_OUT= 0 mA

CMOS Levels

V_CCOperating Supply

Current

I_CC

Automatic CE

Power-Down Cur-

rent— CMOS Inputs

CE > V_CC– 0.3V

V_IN> V_CC– 0.3V or V_IN< 0.3V,

f = f_max

I_SB1

100

µA

Automatic CE

CE > V_CC– 0.2V

I_SB2

Power-Down Cur-

rent— CMOS Inputs

V_IN> V_CC– 0.2V or V_IN< 0.2V,

f = 0, Vcc=3.3V

Capacitance^[5]

Parameter

Description

Test Conditions

T_A= 25°C, f = 1 MHz,

V_CC= V_CC(typ.)

Max.

Unit

C_IN

Input Capacitance

Output Capacitance

C_OUT

Thermal Resistance

Description

Test Conditions

Symbol

BGA

Units

Thermal Resistance

Still Air, soldered on a 4.25 x 1.125 inch, 4-layer

printed circuit board

Θ_JA

°C/W

(Junction to Ambient)^[5]

Thermal Resistance

(Junction to Case)^[5]

Θ_JC

°C/W

Note:

5. Tested initially and after any design or process changes that may affect these parameters.

1 234 5 6 7...11

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